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this is information on a product in full production. december 2015 docid15795 rev 5 1/13 STAP85025S rf power transistor, ldmost plastic family n-channel enhancement-mode lateral mosfets datasheet - production data figure 1. pin connection features ? excellent thermal stability ? common source configuration ? p out = 25 w with 15.7 db gain @ 870 mhz / 13.6 v ? plastic package ? esd protection ? in compliance with the 2002/95/ec european directive description the STAP85025S is a common source n- channel, enhancement-mode lateral field-effect rf power transistor. it is designed for high gain, broadband commercial and industrial applications. it operates at 13.6 v in common source mode at a frequency up to 1 ghz. the STAP85025S boasts the excellent gain, linearity and reliability of st?s latest ldmos technology mounted in stap? st advanced powerso-10 rf package. the STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio. the stap? st plastic package has been designed to offer high reliability and high power capability. it has been specially optimized for rf needs and offers excellent rf performance and ease of assembly. stap1 drain gate source table 1. device summary order code marking package packing STAP85025S STAP85025S stap1 tube www.st.com
contents STAP85025S 2/13 docid15795 rev 5 contents 1 electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 esd protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6.1 stap1 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid15795 rev 5 3/13 STAP85025S electrical data 13 1 electrical data 1.1 maximum ratings 1.2 thermal data table 2. absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 40 v v gs gate-source voltage -0.5 to +15 v i d drain current 7 a p diss power dissipation (@ t c = 70 c) 79 w t j max. operating junction temperature 165 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r thjc junction-case thermal resistance 1.2 c/w
electrical characteristics STAP85025S 4/13 docid15795 rev 5 2 electrical characteristics t case = +25 c 2.1 static 2.2 dynamic 2.3 esd protection characteristics table 4. static symbol test conditions min. typ. max. unit i dss v gs = 0 v v ds = 25 v - 1a i gss v gs = 5 v v ds = 0 v 1 a v gs(q) v ds = 10 v i d = 300 ma 4.1 v v ds(on) v gs = 10 v i d = 1 a 0.27 0.31 v c iss v gs = 0 v v ds = 12.5 v f = 1 mhz 55 pf c oss v gs = 0 v v ds = 12.5 v f = 1 mhz 40 pf c rss v gs = 0 v v ds = 12.5 v f = 1 mhz 1.5 pf table 5. dynamic symbol test conditions min. typ. max. unit p3db v dd = 13.6 v, i dq = 300 ma, f = 870 mhz 25 30 - w g p v dd = 13.6 v, i dq = 300 ma, p out = 10 w, f = 870 mhz 15 17.3 db h d v dd = 13.6 v, i dq = 300 ma, p out = p3db, f = 870 mhz 60 66 % load mismatch v dd = 17 v, i dq = 300 ma, p out = 45 w, f = 870 mhz all phase angles 20:1 vswr table 6. esd protection characteristics test conditions class human body model 2 machine model m3
docid15795 rev 5 5/13 STAP85025S impedance 13 3 impedance figure 2. current conventions table 7. impedance data frequency (mhz) z in ( )z dl ( ) 870 mhz 0.21 +j 1.82 1.23 -j 0.98
typical performance STAP85025S 6/13 docid15795 rev 5 4 typical performance figure 3. capacitances vs. drain voltage 0 20 40 60 80 100 120 0 1020304050 vds (v) capacitances (pf) coss cr s s cis s figure 4. dc output characteristics (t amb = -40 c) figure 5. dc output characteristics (t amb = 20 c) dc output characte 0 1 2 3 4 5 6 0510 vds[v] vg s = 4.0 v vg s = 4.5 v vg s = 5.0 v vg s = 5.5 v vg s = 6.0 v tamb = - 40 c id[a] 0 1 2 3 4 5 6 0510 vds[v] vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 5.5v vgs = 6.0v tamb = + 20 c id[a]
docid15795 rev 5 7/13 STAP85025S typical performance 13 figure 6. dc output characteristics (t amb = 60 c) figure 7. gain vs. output power and bias current 0 1 2 3 4 5 6 024681012 vds[v] vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 5.5v vgs = 6.0v tamb = + 60 c id[a] 10 11 12 13 14 15 16 17 18 19 20 0 5 10 15 20 25 30 35 input power (w) output power (w) idq = 100ma idq = 200ma idq = 300ma freq = 870 mhz vdd = 13.6v gain (db) output power (w) figure 8. output power and efficiency vs. input power figure 9. output power and drain current vs. gate voltage 0 5 10 15 20 25 30 35 40 0.00.51.01.52.02.5 input power (w) output power (w) 0 10 20 30 40 50 60 70 80 efficiency (%) pout eff freq = 870 mhz vdd = 13.6v idq = 300 ma 0 4 8 12 16 20 24 28 32 0123456 vgs (v) pout (w) 0 0. 4 0. 8 1. 2 1. 6 2 2. 4 2. 8 3. 2 id (a) pout id freq = 870 mhz pi n = 0.4w idq = 300ma
typical performance STAP85025S 8/13 docid15795 rev 5 figure 10. pout and drain current vs. supply voltage (p in = 0.4 w) figure 11. pout and drain current vs. supply voltage (p in = 1 w) 0 5 10 15 20 25 30 7 10131619 vdd (v) pout (w) 0 0.5 1 1.5 2 2.5 3 id (a) pout id freq = 870 mhz idq = 300ma pin = 0.4w 0 5 10 15 20 25 30 35 40 7 10131619 vdd (v) pout (w) 0 0.5 1 1.5 2 2.5 3 3.5 4 id (a) pout id freq = 870 mhz idq = 300ma pin = 1w
docid15795 rev 5 9/13 STAP85025S mounting recommendations 13 5 mounting recommendations the stap? product family, comprising a combination of the ubiquitous powerso-10? package and a smartly designed compression clamp, provides a system to achieve superior electro-mechanical contact between the powerso-10 heat slug and a heatsink in traditional bolt-down applications where through-the-board mounting and removal procedures are required. the clamp is bonded to the powerso-10 package with a formulated epoxy. the stap? family is not recommended and should not be considered as a stand-alone package for surface mount soldering applications. mounting recommendations are available on www.st.com (see application note an3232).
package information STAP85025S 10/13 docid15795 rev 5 6 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 6.1 stap1 package information figure 12. stap1 package outline $0y
docid15795 rev 5 11/13 STAP85025S package information 13 table 8. stap1 package mechanical data dim. mm inch min. max. min. max. a 5.40 5.65 0.212 0.222 b 9.27 9.53 0.365 0.375 b1 2.90 3.10 0.114 0.122 b2 15.10 15.65 0.594 0.616 c 6.60 6.99 0.260 0.275 d 23.11 23.42 0.910 0.922 d1 14.88 15.19 0.586 0.598 d2 7.52 7.82 0.296 0.308 e 7.42 7.57 0.292 0.298 e1 5.69 5.84 0.224 0.230 f 0.21 0.31 0.008 0.012 g 1.62 1.72 0.064 0.068 q 3.15 3.30 0.124 0.130 r1 1.52 0.060 r2 0.64 0.025
revision history STAP85025S 12/13 docid15795 rev 5 7 revision history table 9. document revision history date revision changes 01-jun-2009 1 initial release 02-jul-2009 2 deleted moisture sensitivity level table on page 4 20-nov-2015 3 updated description in cover page and added section 5: mounting recommendations. minor text changes. 23-nov-2015 4 updated the part number in cover page. minor text changes. 01-dec-2015 5 updated the table 1: device summary , and section 5 .
docid15795 rev 5 13/13 STAP85025S 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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